ES3B [BL Galaxy Electrical]
SURFACE MOUNT RECTIFIER; 表面贴装整流器型号: | ES3B |
厂家: | BL Galaxy Electrical |
描述: | SURFACE MOUNT RECTIFIER |
文件: | 总2页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
ES3A--- ES3G
BL
VOLTAGE RANGE: 50 --- 400 V
SURFACE MOUNT RECTIFIER
CURRENT: 3.0 A
FEATURES
DO-214AB(SMC)
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-214AB,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.21 grams
Mounting position: Any
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ES3A
ES3B
ES3C
ES3D
ES3G
UNITS
EA
50
35
50
EB
100
70
EC
150
105
150
ED
200
140
200
EG
400
210
400
Device marking code
Maximum recurrent peak reverse voltage
V
V
V
VRRM
VRMS
VDC
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
100
A
IF(AV)
3.0
@T =100
A
Peak forward surge current
A
8.3ms single half-sine-wave
IFSM
100
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage at3.0 A
V
VF
IR
0.90
10
1.25
Maximum reverse current
@TA=25
A
at rated DC blocking voltage @TA=100
Typical reverse recovery time (Note1)
500
25
ns
trr
CJ
35
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
pF
45
RθJA
TJ
25
/W
Operating junction temperature range
- 55 ---- + 150
- 55 ---- + 150
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
www.galaxycn.com
2. Measured at 1.0MHZ and applied reverse voltage of 4.0VDC.
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
BLGALAXY ELECTRICAL
1.
Document Number 0280029
RATINGS AND CHARACTERISTIC CURVES
ES3A --- ES3G
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
0
(+)
PULSE
GENERATOR
(NOTE2)
-0.25A
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE 1)
1
NONIN-
DUCTIVE
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
SET TIME BASE FOR 10/15 ns/cm
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
z
100
10
3
3.0
1.0
Single Phase
Half Wave 60H
1.5
Z
Resistive or
TJ=25
Inductive Load
0.1
Pulse width=300
1% Duty Cycle
s
0
0
25
50 75
100
125 150 175
0.01
0
0.4
0.8 1.0
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
FIG.5 -- PEAK FORWARD SURGE CURRENT
200
100
100
60
8.3ms Single Half
Sine-Wave
80
60
40
20
10
6
40
20
4
TJ=25
2
1
0
1
5
10
50 100
0.1 0.2 0.4
1
2
4
10 20 40
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
www.galaxycn.com
Document Number 0280029
BLGALAXY ELECTRICAL
2.
相关型号:
ES3B-13-F
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, GREEN, PLASTIC, SMC, 2 PIN
DIODES
ES3B-E3/9AT
DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN, Rectifier Diode
VISHAY
ES3B-HE3/57T
3A, 100V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
ES3B-HE3/9AT
3A, 100V, SILICON, RECTIFIER DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
VISHAY
ES3B002WF1000
Card Edge Connector, 2 Contact(s), 1 Row(s), Female, Straight, Surface Mount Terminal, ROHS COMPLIANT
JAE
©2020 ICPDF网 联系我们和版权申明